Effect of thermal annealing on defects in post-growth hydrogenated GaNP
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چکیده
منابع مشابه
The Effect of Rapid Thermal Annealing on InAs/GaAs Quantum Dot Solar Cells
The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) has been studied. A significant improvement in photoemission, photocurrent density, and spectral response has been observed with post-growth annealing. The optimal anneal temperature was found to be 700 ° C, which lead to an 18% improvement in current density from 4.9 mA cm -2 for as-grown sample to 5.8 mA cm -2 . ...
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